An E-Band Variable Gain Low Noise Amplifier in 90-nm CMOS Process Using Body-Floating and Noise Reduction Techniques

A variable gain low noise amplifier (VGLNA) for millimeter-wave (MMW) wireless communication is proposed in this paper. This VGLNA is implemented using 90-nm CMOS process. It shows small signal gain greater than 20.9 dB from 68.9 to 87.6 GHz with 2.5-dB variation and a dc consumption 56 mW. The gain control range is 2.3 to 21.1 dB at center frequency. The measured minimum noise figure (NF) is 5.3 dB at 80 GHz. This work shows the best noise performance of LNAs in 90-nm CMOS at similar frequencies and comparable figure of merit to those MMW LNAs in better IC process.