Development of an Operator-based Fully Analytical Charge-controlled Memristor Model

In this paper, a modeling methodology is presented. It is focussed on developing a charge-controlled model of the memristor that can be compatible with the standard circuit simulation framework à la SPICE. The starting point is a modified form of the nonlinear drift differential equation that describes the physic behavior of the device. Furthermore, a homotopy-based method is applied in order to find the symbolic solution to the differential equation. Then, a pair of operators is used to recast the expression of the memristance in a fully analytical form. In this way, a family of models, that is ordered according the the values of the operators, is generated.