High Frequency Analysis of GaAsP /InSb Hetero-Junction Double Gate Tunnel Field Effect Transistor

In this paper, we have presented a detailed study on a new Double Gate Tunnel Field-Effect Transistor for suppression of ambipolar behavior and improved high-frequency response. The proposed device Hetero Gate Oxide Hetero-Junction Dual Gate Tunnel Field Effect Transistor (HGO-HJ-DG-TFET) is based on heterojunction material and gate dielectric engineering. Heterojunction provides increment in the drain current (Ids) by decreasing the tunneling width at sourcechannel (S/C) junction and increase the width at drain-channel (D/C) junction. Further, implementation of high-k dielectric at S/C region helps to increases the electric field thus providing better controllability. Therefore, the performance of the proposed device gets better in terms of subthreshold slope, drain current, resistant to parasitic capacitance and high frequency parameters. The reliability of device in high-frequency applications is also studied with optimization of channel length and drain voltage. Hence, the overall performance of the HGO-HJ-DG-TFET is examined using Silvaco TCAD for better efficiency of the device.