GaAs Junctionless FinFET Using Si3N4 Spacer for High Performance Analog Application

This paper proposes GaAs junctionless FinFET which is compared with Si and Ge based junctionless FinFET and shows significant improvement. It is designed using metal gate and using Si3N4 as a spacer between gate and source/drain. Improved switching is observed for GaAs Junctionless FinFET as compared to Si and Ge devices. GaAs shows more variation of transconductance compared to Si and Ge FinFET which reflects the proposed device can be used to design SRAM as it is found to bring read stability and have less parasitic capacitance, less leakage current and higher switching speed.