Abstract:
A Ge-on-Si photodiode (PD) array is demonstrated using the AIM Photonics silicon foundry. The array with 4 PDs has a low dark current of 0.3 μA at -2 V, 0.58 A/W external...Show MoreMetadata
Abstract:
A Ge-on-Si photodiode (PD) array is demonstrated using the AIM Photonics silicon foundry. The array with 4 PDs has a low dark current of 0.3 μA at -2 V, 0.58 A/W external responsivity, a 3-dB bandwidth of 15 GHz and an RF saturation power of 7 dBm.
Published in: 2018 IEEE Photonics Conference (IPC)
Date of Conference: 30 September 2018 - 04 October 2018
Date Added to IEEE Xplore: 08 November 2018
ISBN Information:
Contents 