Survey on NEM Relays Integrated with Schmitt Trigger Based Multi Threshold CMOS SRAM

NEMS are of submicron range which are useful to obtain high fundamental frequencies without having any impact on its mechanical response. NEM Relay is a switch made of nano meter scale using semiconductor fabrication. These have zero current leakage and low power consumption and acts like an ideal switch which can be used instead of traditional semiconductor logics. Due to zero off state leakage NEM Relays give us a scope for low power design. To increase the cell stability than that of CMOS 6T SRAM cell, it utilizes the properties of NEM relays that is infinite subthreshold slope and hysteresis. In this paper we use Schmitt trigger multi threshold CMOS instead of conventional CMOS 6T SRAM cell in order to increase the noise so that the signal to noise ratio decreases.