Recent Developments in Dual Gate Based Thin Film Transistors and Their Applications

This paper presents the depth review of dual gate based devices and their applications. Recent developments have drawn the attention to increase application of organic devices due to their low cost large area applications, ease of fabrication and low temperature processing requirements. The above properties make them suitable for the flexible electronics devices and circuits. Unlike the CMOS based inverters that require silicon substrate, TFT's can be fabricated using all solution based processes which makes them possible to develop stretchable electronics. Previous work have been reported on TFT based circuits that demonstrate their potential to build complex flexible electronics, as reported MOS devices are p-type or n-type structures,that vary in their performance from one another widely, this topology is well applicable to organic based TFT's.Accordingly the circuits obtained using these structures represent different characteristics. This paper presents the depth review of dual gate based organic circuits in terms of their performance parameter that includes noise margin and delay. The stability issues of these inverters and its impact on their performance is also presented.