A 100 V Lateral Trench Power MOSFET on InGaAs/InP

In this paper, we present a lateral-trench metal-oxide-semiconductor field-effect transistor (LT-MOSFET) on high mobility InGaAs material. The proposed LT-MOSFET emerged with trench technology consist a gate electrode placed vertically in a trench on the left end of the p-body region. The trench in the drift region introduce a RESURF effect to reduces the electric field and improves the device breakdown voltage. By 2-D numerical simulation, LT-MOSFET exhibits 2.4 times improvement on breakdown voltage with 3.3 times high figure-of-merit in comparison with the conventional-lateral MOSFET (CLMOSFET) for identical cell pitch and gate length.