Switching SiC MOSFETs Under Conditions of a High Power Module

This paper discusses the investigation of SiC MOSFET switching characteristic in high inductive environment. The characteristic product of stray-inductance times nominal current grows with the power rating and is a limiting factor for the speed of current commutation. The reduction of switching speed due to this limit and its impact on switching performance is evaluated. Furthermore this paper proposes a, according to the author's knowledge, novel benchmark for characterisation and comparison of SiC MOSFET switching behaviour.