Surge Current Simulation in a Half Bridge Using a Thermal Model

In this paper an IGBT half bridge with an antiparallel press-pack diode is examined for MMC use. State-of-the-art half bridges use a bypass thyristor in order to protect the lower diode during a DC-short. This paper investigates prediction methods to calculate the stress of diode 2. Furthermore, it deals with the possibility to substitute the bypass thyristor with a press-pack diode (PP-diode) to enhance to use of the equipped semiconductor area.