Extracting Large-Signal Transient Characteristics of Power Electronic Devices Using Nanosecond Pulsing Techniques

With faster technologies like SiC and GaN, the transient behavior of switching power devices, modules, and systems becomes increasingly important. The presented methodology uses Transmission Line Pulsing to extract the large-signal transient characteristics of power devices and involved parasitics from their nanosecond pulse response on package and board level.