Mass Migration Damaged Based Model and the Behaviour of Electromigration and Thermomigration in Interconnect

Electromigration (EM) and thermomigration (TM) are reliability issues in integrated circuits due to the rapid progression of miniaturised electronic circuits, and these issues are made worse by the increasing current densities during operation. The review of EM and TM physics in aluminium thin film, copper interconnect and solder joint is presented. The physics of EM and TM in thin film interconnect are reviewed to provide a basis for understanding the factors that affect interconnect lifetime under the various test conditions. Differences in materials and geometries between thin film and solder joint contribute to the complexity of EM and TM processes. The understanding of EM and TM failure mechanism modes in thin metal film and solder joint are established and based on these mechanisms, physical based model for EM and TM in thin metal film and solder joint to predict the reliability are reviewed. The irreversible thermodynamic damage model is employed to describe the EM and TM failure mechanism modes have previously been successfully applied to EM-induced degradation of microelectronic solder joints. An entropy production in the system is used as damage matrix. Thus, this establishes physical based model apply in the TSV as a new structure of interconnects in integrated circuits to assess the reliability will be presented.