Field Effect Transistors based on Graphene Micro Wires Defined by Lithography and Plasma Etching

In this work, Field Effect Transistors based on Graphene (GraFETs) were fabricated, with the current conduction channel with 10 wires (width of 0.36 $\mu$ m each) in parallel, using the process steps of lithography and oxygen plasma etching. Furthermore, alternatives films, such as TiO_x, as gate dielectric, and TiN, as metal electrodes, were used in these devices. Raman spectroscopy, used to identify the integrity of the Chemical Vapor Deposition (CVD) graphene layer during the fabrication, indicated that the graphene channel is formed by monolayer structure with high quality, which are important characteristics to get GraFET devices. SEM analyses, used to identify the device surfaces, indicated that it is possible to obtain the GraFET channel with 10 graphene wires in parallel. To finalize, all current-voltage curves indicated that GraFETs are working and our fabrication method can be used in device and circuit technology based on graphene.