Low-frequency Noise Characterization of Graphene FET THz Detectors

Graphene field-effect transistors are promising for direct detection of THz signals at room temperature. The sensitivity of such detectors can be in part limited by the low-frequency noise. Here, we report on the characterization of the low-frequency noise of graphene field-effect transistor THz detectors in the frequency range from 1 Hz to 1 MHz. The room-temperature Hooge parameter is extracted to be around 2×10
^-3
. The voltage responsivity at room-temperature and the corresponding minimum noise equivalent power at 0.3 THz are estimated to be 11 V/W and 0.2 nW/H
_z
o.5, respectively, at a modulation frequency of 333 Hz, which shows comparable results with other detector technologies.