Fast Switching and Double Resonance of Nonlinear Transistors in Terahertz Regime

We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and terahertz oscillation when the Fermi levels in the normal and the superconducting leads are varied. The transport characteristics exhibit double resonance transport in terahertz regime.