Switching Loss Analysis of SiC-MOSFET based on Stray Inductance Scaling

Recently, high-speed switching circuits using SiC power modules have been developed for using the next-generation power converter circuits. The stray inductances inside the converter circuit caused by among DC capacitors, bus bars, and power module package are one of the most critical parameters, which influence not only the over-voltage but also the switching loss. This paper proposes a quantitative design procedure for the switching losses depending the stray inductances. This paper focuses on the effects of stray inductance on both the turn-on and turn-off losses, and the quantitative analyses are explained using a stray inductance scaling method. To verify the design procedure, experimental results rated at 500 V and 160 A are demonstrated using an all-SiC power module.