A Flyback Converter with SiC Power MOSFET Operating at 10 MHz: Reducing Leakage Inductance for Improvement of Switching Behaviors

A high-frequency flyback converter is investigated in this paper. In order to increase the switching frequency of the flyback converter, we focus on the impacts of the leakage inductance of the transformer at the primary side on the transients of the turn-off characteristics. It is found that the leakage inductance of the transformer limits the turn-off behaviors of the primary side. By reducing the leakage inductance of the transformer on the primary side, the improved flyback converter achieves the 10 MHz operation. The output voltage is controlled by duty ratio from 30% to 60%. The maximum output power of 16 W and the maximum conversion efficiency of 67% are observed in the flyback converter.