2D simulations of InGaAs/InAlAs/InP HEMTs with asymmetrical gate recess

InGaAs/InAlAs/InP HEMTs were studied with an emphasis on the on-state breakdown and high-frequency properties. 2D physical simulations showed an excellent agreement with measured devices. It was demonstrated that an increase of the gate-drain spacing, while keeping the gate-source distance constant by means of an asymmetric gate recess, increases the on-state breakdown voltage. The high-frequency properties are not significantly degraded by the asymmetric gate recess. InP HEMTs with composite channels were also investigated.