Graphene/MoS2 Based RF-NEMS Switches for Low Actuation Voltage and Enhanced RF-Performance

In this work, modeling, simulation and analysis of a contact type RF nano-electromechanical switches (RF-NEMS) with very low actuation voltage and enhanced RF-performance is presented. The switches are modeled using previously known theory from literature and then geometrical dimensions are optimized for low actuation voltage, low insertion loss and high isolation as objectives. The effects of the length, width and thickness of graphene/Mos
₂
, beam on various performance parameters are studied in detail. The various performance parameters are computed like modal frequencies, casimir force, electrostatic force, capacitance, release time, actuation voltage and S-parameters are computed using ANSYS structural and HFSS software. The switch exhibits low actuation voltage <;1V for different thickness of graphene/MoS
₂
, as a beam material. The mechanical resonant frequency and quality factor are found to be 72.5 kHz, 28 kHz and around 2, respectively, with a simulated switching time of 19 μs to 71 μs for optimum length of 10 μm are obtained for all three layers. It is concluded that low actuation voltage NEMS switches can be realised using single/bilayer layer 2D material giving enhanced RF performance.