Double Gate Gaussian Doped Negative Capacitance FET (DGGDNCFET): A Novel Concept for Enhanced Device Performance

In this work, the impact of negative capacitance effect and vertical Gaussian doping profile in the channel has been examined on short channel Double Gate FET by employing baseline approach. The electrical characteristics of Double Gate Gaussian Doped Negative Capacitance FET (DGGDNCFET) have been investigated considering ferroelectric layer of PVDF-TrFE (polyvinyledenedifluoride-trifluoroethylene) in the gate stack along with an interfacial layer of SiO₂. A substantial improvement in performance of DGFET has been observed by incorporating negative capacitance effect and non-uniform doping profile in terms of surface potential, charge density, gate capacitance, drain current and subthreshold slope. Subthreshold slope values much lower than 60mV/dec have been observed at gate length = 20nm, which implies that the device is suitable for applications which require ultra low voltage/power.