Comparative analysis of High-K gate stack based Conventional & Junctionless FinFET

In this paper, the effect of high-K gate dielectric on the analog/RF performance of conventional trigate FinFET and junctionless trigate FinFET has been compared. It is observed that the deterioration in analog/RF performance is more pronounced in conventional trigate FinFET device as compared to junctionless trigate FinFET device when high-K gate dielectric is used instead of SiO2. The deterioration in intrinsic dc gain (ΔAV = AV(K=3.9) - AV(K=40)), cut-off frequency (ΔfT = fT(K=3.9) - fT(K=40)), and maximum oscillation frequency (ΔfMAX = fMAX(K=3.9) - fMAX(K=40)) is 10.7 dB, 5.5 GHz & 11 GHz respectively in case of conventional trigate FinFET and 6 dB, 3.9 GHz & 30 GHz respectively in case of junctionless trigate FinFET. Thus, use of high-K gate dielectric is more beneficial in junctionless trigate FinFET devices for better analog/RF performance.