A Novel Power Mixer for NB-IoT Transmitter in 65-nm CMOS

NB-IoT (Narrow Band Internet of Things) becomes one of the most attractive low cost and long battery life technology since last year. A fully integrated power mixer, aiming low power consumption and small die area for such application is illustrated in this paper. It adopts both Gilbert mixer and class-AB power amplifier functions in single stage. Such novel structure achieves low power operation and high linearity with literary half of the layout area comparing with the 2-stages approach. From post layout simulation, 3dBm output power is delivered to 50Ω load with 16mA under 2.5V supply. Its in-band emission is less than -57dBc. The drawing area is 0.27mm
²
in a commercial 65-nm CMOS process.