A Novel Dual-Gate SOI LDMOS with A Source Floating Field Plate

A novel lateral double-diffused MOSFET with a source floating field plate and dual trench gates based on silicon-on-insulator technology (s-FFP SOI LDMOS) is proposed in this paper. The s-FFP modulates the distribution of the electric field in the drift region, which increases the breakdown voltage (BV). At the same time, the doping concentration of the drift region (Nd) is increased because of the assistant depletion effect of s-FFP and a lower specific on-resistance (Ron, sp) is therefore obtained. Compared with the C-SOI, the Ron, sp of the s-FFP SOI can be reduced by more than 53.1% when its BV can be increased by 50%, and the figure-of-merit (FOM) is enhanced by 89.4%. So the s-FFP SOI better improves the tradeoff between BV and Ron, sp.