Jsc and Voc Optimization of Perovskite Solar Cell with Interface Defect Layer Using Taguchi Method

This paper is a study on Perovskite Solar Cell to optimize open circuit voltage, V_oc and short circuit current density, J_sc for maximum efficiency at variation depth of interface defect layer (IDL). The Perovskite Solar Cell structure is simulated with combinations of IDL at 6nm, 8nm and 10nm of thickness sandwiches on both side of the solar cell absorber layer. Taguchi Method using L₉ Orthogonal Array with Larger-The-Better (LTB) was used on finding most effective value on three material parameters: Cadmium Sulfide (CdS) as an electron transport layer (ETL), Perovskite absorber layer (CH₃NH₃Pbl₃) and Copper Telluride (CuTe) as hole transport layer (HTL) in order to achieved best Voc and J_scvalues. The works was done by simulating a numerical model using Analysis Of Microelectronic and Photonic Structures (AMPS-ID) software. Using ANOVA, it was discovered the Perovskite absorber layer thickness is vital in affecting the increasing and decreasing on both V_oc and J_sc. Taguchi predicted a 200nm of thickness for best J_sc but predicted 300nm for best V_oc. The thickness of 200nm is selected for cost effectiveness. Taguchi method also predicted CdS and CuTe are considered slightly significant on improving the efficiency. Post Taguchi optimization approach shows Perovskite Solar Cell with CH₃NH₃Pbl₃absorber layer has average power conversion efficiency of 20.7% on any combination of mentioned IDL thickness. With the aid of Taguchi method, a stable Perovskite Solar Cell efficiency with variation IDL thickness is achieved.