Effect of oxide layers on MONOS device performance based on TCAD simulation

3D NAND flash memory based on MONOS structure offers a new path to break through the limitation of memory capacity of 2D NAND flash. Thickness of top oxide layer and bottom oxide layer of MONOS directly influence performance of device. Technology Computer Aided Design(TCAD), as the most effective and powerful tool to study the electrical properties of various semiconductor devices, can be used to reveal the influence. In this paper, P/E cycle of MONOS device with varied thickness of high-k aluminum oxide and tunneling layer are investigated with Fowler-Nordheim tunneling model being put into consideration. Furthermore, threshold voltage and data retention of MONOS device with optimized thickness of oxide layers are characterized as well, which leave a novel route for related device design and optimization.