Temperature Effect on GaSb/GaAs Quantum Dots Solar Cell

In this work, we have studied the GaSb/GaAs Quantum Dot Solar Cell for different number of quantum dot layers, the short circuit current, the open circuit voltage, the fill factor and the conversion efficiency are improved with increasing the insertion of quantum dot layers in the intrinsic region; The best values of these parameters are obtained for structure with 30 QD layers. These results are supported by the external quantum efficiency measurements. Then the analysis of the GaSb/GaAs -30 QDSC with temperature change range from 260 K to 400 K indicates that the photovoltaic device performance are degraded when temperature increases such as the open circuit voltage, the fill factor and the conversion efficiency, however the short circuit current shows an enhancement of about 20.24% compared with its value obtained at room temperature.