Improved Small-Signal Model of Single-Electron Transistor

An improved version of the Small-Signal model of a single-electron transistor for high frequency is proposed in this paper. The modification is done by incorporating the parasitic elements for the high-frequency operation of single-electron transistor. The high-frequency operation introduces several spurious elements due to the physical structure and the testing instrument connection to the device under test. The impact of these elements on the matching network is significant but yet unpredictable. The formulation of the Small-Signal model considering the extrinsic and intrinsic elements is elaborated in this literature. The scattering parameters play an important role in the determination of the properties of a transistor working at high frequency. This study is carried out for determining the scattering parameters for single-electron transistor and their relationship with the other intrinsic as well as extrinsic parameters.