The third generation 6.5kV HiPak2 module rated 1000A and 150°C

In this paper, we introduce a new 6.5 kV 150 deg C HiPak2 module rated at 1000 A, based on the Enhanced Planar (EP) IGBT and Field Shielded Anode (FSA) diode concepts. Design modifications for both the Insulated Gate Bipolar Transistor (IGBT) and diode have been introduced to achieve lower leakage currents and hence an increase in the maximum operating junction temperature. Furthermore, the devices have seen an optimization in the termination width and silicon thickness to achieve larger active areas and a higher current capability. A new robust passivation has led much improved device reliability. In addition, by re-designing the ceramic substrate layout, an increase of the diode chip size was possible to match the improved IGBT performance. The paper presents design details and experimental results both at chip and module levels for the finalized 6.5 kV 150 deg C 1000 A rated HiPak2 module.