High reliability and robust monolithic 1200 V three-phase gate driver with integrated bootstrap diode for multiple applications

A higher integration level and higher performance are two important goals for level-shifter- based gate driver ICs. Infineon SOI (Silicon-On-Insulator) technology offers integrated boot-strap diodes and lower level-shifter losses, which provide higher reliability, low power dissipation, compact PCB design, and lower overall BOM cost. This paper describes the new Infineon 1200 V three-phase gate driver IC, and its superior performance and robustness. System applications can significantly benefit from this new gate driver IC product.