Monolithic integrated magnetic sensor in a digital CMOS technology using a switched current interface system

A magnetic field-to-voltage converter using a magnetic MOSFET (MAGFET) device has been designed, simulated and tested. The sensor was measured under magnetic fields ranging from 0 to 0.8 T and the obtained sensitivity was 0.03 T/sup 1/ with an offset value lower than 0.2%. A macro model for the MAGFET in the saturation region is presented. Also, we have designed a complete integrated measurement system including the sensor, bias interface circuit and a A/D converter based on a current-mode technique.