Effect of Self-Consistency Technique on Current Density Profile of Resonant Tunneling Diode

This paper reveals the importance of self-consistency technique for computing current density in resonant tunneling device. Al
_x
Ga
_1-x
As/GaAs/Al
_y
Ga
_1-y
As structure is considered for simulation purpose, and both Schrödinger and Poisson's equations are simultaneously solved subject to appropriate boundary conditions to obtain current density as a function of externally applied bias. Structural parameters and material compositions within type-I range are varied to get the fluctuations in current, which is otherwise absent when calculation is performed without applying self-consistency technique. Findings are significant as magnitude of current obtained is higher than that obtained when self-consistency is absent. Result has immense importance for low bias application of RTD due to the presence of peaks at particular system compositions.