Calculating Transconductance of Nano-HEMT for Different Parasitic Resistances and External Biasing Conditions

Transconductance of high electron mobility transistor is analytically computed by simultaneously solving Poisson's equation and carrier density equations subject to appropriate boundary conditions in nanometric dimension. Static and transfer characteristics are obtained for low biasing ranges from which device transconductance is computed. External biases, threshold voltage of the device and source and drain resistances are considered to analyze the effect on device transconductance. Peaks of the transconductance plots are obtained at lower V GS, and decreasing nature is seen at with increase of vertical bias. Results are suitable for using the device as amplifier in nanoelectronic circuit.