Analysis of CNTFET Sequential Circuit Using Metastability and Robustnes of Voltage and Temperature Variations

In today's modern world where everything is digitized and miniaturized we need small and stable digital system for years. The circuit failure largely depends upon meta stable state in digital circuits. This paper aims at to analyses metastability of CNTFET and optimizes the sequential circuit parameters. The power consumed by CNTFET is found out to be 80 percent less when compared with existing CMOS FETs. The existing CMOS technology CNTFET improves metastability by factor of 1.3 times and frequency resolution of by 10
³
times. Also this paper demonstrates the advantages offered by CNTFET under operational conditions such as very low power supply voltage and high temperature variations. The simulation results show that circuits designed using CNTFETs have a high robustness to voltage and temperature variations as compared to CMOS based circuits. We expect this CNTFET to be used in critical applications such as medical instruments, where the digital circuit should not fail.