Very Wide-Band and Compact VO2 Based Switches

This paper presents the design, fabrication and high frequency characterization of two terminals RF switches based on Vanadium dioxide (VO₂) material. This material presents a thermally induced metal-insulator transition showing a resistivity variation up to five orders of magnitude as the material change between the insulator state and the metallic state. We present the design of 2-terminal RF switch and the integration of this structure into series-shunt switch structure to increase the isolation on the OFF state. The proposed device has less than 2 dB loss and more than 30 dB isolation up to 70 GHz.