Field-Plated Lateral $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2

In this letter, we report on demonstrating high-performance field-plated lateral
$\beta $
-Ga
₂
O
₃
Schottky barrier diode (SBD) on a sapphire substrate with a reverse blocking voltage of more than 3 kV and a low dc specific ON-resistance (
${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}}$
) of 24.3
$\text{m}\Omega \cdot $
cm
²
at an anode–cathode spacing (
${L}_{\text {AC}}$
) of
$24~\mu \text{m}$
. To the best of our knowledge, this lateral breakdown voltage (BV) >3 kV with dc power figure-of-merit (FOM) >370 MW/cm
²
is the highest BV achieved among all the
$\beta $
-Ga
₂
O
₃
SBDs. Meanwhile, lateral
$\beta $
-Ga
₂
O
₃
SBD with
${L}_{\text {AC}} = \text {16}\,\,\mu \text{m}$
also demonstrates a high BV of 2.25 kV and low
${R}_{{ \mathrm{\scriptscriptstyle ON}, \text {sp}}} = \text {10.2}\,\,\text{m}\Omega \cdot $
cm
²
, yielding a record high dc power FOM of 500 MW/cm
²
. Combining with 10
⁹
high-current ON/OFF ratio, 1.15-eV Schottky barrier height and 1.25 ideality factor,
$\beta $
-Ga
₂
O
₃
SBD with field-plate structure shows its great promise for power electronics applications.