A Capacitively Coupled, Pseudo Return-to-Zero Input, Latched-Bias Data Receiver

A power and area efficient, capacitively coupled receiver for short links is presented. The proposed architecture enables a wide input common-mode range by utilizing on-chip ac-coupling capacitors, which avoids the use of large, off-chip capacitors or slow, rail-to-rail input stages. The small coupling capacitance and bias switches generate a pseudo return-to-zero pulse that is latched into the receiver via digital feedback. This input latching reduces the effects of baseline wander caused by unbalanced data streams without the need for encoding or scrambling. In addition, the full-scale digital feedback is used as the receiver output, enabling direct interface with standard digital cells. The architecture is implemented in a 130-nm SiGe BiCMOS and 45-nm CMOS silicon-on-insulator (SOI) technology. The 130-nm SiGe BiCMOS design achieves a peak data rate of 10 Gb/s at 5.1 mW, while a peak efficiency of 0.46 mW/Gb/s is recorded at 8 Gb/s. The 45-nm CMOS SOI design achieves a peak data rate of 30 Gb/s at 12.02 mW, with a peak efficiency of 0.24 mW/Gb/s at 25 Gb/s. Both the SiGe BiCMOS and CMOS SOI designs exhibit BERs of <;10
^-12
with PRBS15 data as small as 100 mV and occupy 0.012 and 0.007 mm
²
, respectively, including the on-chip coupling capacitance.