Simulation of Self-Heating Effect for Different Gate Lengths and its Influence on DC Characteristics of AlGaN/GaN HEMT

High Electron Mobility Transistor (HEMT) based on GaN are being widely used in defense for wireless communication, in radar for airborne strategic applications. GaN material properties like mobility, self-heating, band gap and 2DEG concentration are very crucial for optimum device performance and needs to be optimized. AlGaN/GaN HEMTs have become superb device in power electronics as well as for application in high frequency range because of their high 2-D electron gas density along with their high breakdown electric field and electron mobility. HEMTs device gate length influences the cutoff frequency, transconductance and maximum frequency of oscillation. Research is going on to improve the high-frequency characteristics by reducing the gate length. The effect of self-heating of the device on gate length is an important parameter which has been rarely investigated.