High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion Implantation

Nowadays vertical GaN power devices [1-3] are under intensive research from world- wide. With its superior physical properties, e.g. higher critical electrical field, GaN material based power device can provide much better performance than that of Si and SiC. But due to lack of selective area doping technology to form high quality P-N junction [4], complicated epitaxial regrowth method is used to fabricate GaN-based power transistor [5], its high cost would inhibit the adoption for volume production. So new approaches need to develop for GaN vertical power devices.