Effect of Gate Oxide Defects on Tunnel Transistor RF Performance

Tunnel field-effect transistors (TFETs) are designed for low off-state leakage and low drive voltages. To investigate how capable TFETs are of RF operation, we measured their scattering parameters and performed small-signal modeling. We find that in the low frequency ranges, gate oxide defects have a major influence on the RF performance of these devices, which can be modeled by a frequency-dependent gate-to-drain conductance ggd,ω. This model is based on charge trapping in gate oxide defects and was studied before for metal-oxide-semiconductor capacitors [1].