F-Band, GaN Power Amplifiers

This paper reports the design and performance of two new GaN MMIC amplifiers operating at F-band frequencies. The first design produces 28-29 dBm from 102 to 118 GHz, while the second, a broadband design, produces a minimum of 25 dBm across the 98 to 122 GHz band. Both designs exhibit a small-signal gain of 20 dB. In addition, we report a multi-MMIC SSPA with an output power of 2-3 W from 102 to 116 GHz. These are the first reported GaN power results above 100 GHz and the highest power level for any solid-state technology at this frequency.