Titanium Dioxide-Based Memristive Thin Film: A Correlation Study Between the Experimental Work and Simulation Program With Integrated Circuit Emphasis Hyperbolic Sine Models

This paper presents a correlation study between experimental results of titanium dioxide (TiO
₂
)-based memristors and various hyperbolic sine function models. The current-voltage (I-V) characteristics of sol-gel-derived TiO
₂
thin film annealed at 250°C were correlated with the reported hyperbolic sine function simulation program with integrated circuit emphasis memristor models. The correlation study showed that the existing models were not fitted well with our experimental data. The models with the lowest root means square errors were then combined together to achieve better fitting result. Further, experimental results of TiO
₂
thin films fabricated by varying the annealing temperature at 350 °C and 450 °C were correlated to the proposed model to further elucidate the device operation. The parameters were then analyzed by multiplying and dividing the simulation results by two. It was found that both the Schottky and tunneling mechanisms had a significant impact in shaping the I-V characteristic of annealed TiO
₂
thin film and device conductivity. The state variable derivative on the other hand caused changes in device threshold voltage. The knowledge gained from the fitting parameters of the proposed model enables us to predict the performance of fabricated memristive device and engineer the process parameters for desired memristive behavior.