Photoluminescence study of AlGaAs/GaAs heterostructure subsequent to Ga+ focused ion beam etching

The focused ion beam (FIB) is a potential tool in manufacturing microcircuit devices. The main downside of FIB etching process is radiation defects formation. To recover etching surface, we provide 300 C and 620 C annealing. Amount of radiation damage was determined by photoluminescence (PL) measurements.