Quantitative optimization of epitaxial heterostructures for near IR high-power lasers

In this paper, we present the results of careful analyses and calculations aimed at the development of the high power laser diodes, bars and arrays operating in near IR spectral region and based on quantum well A³B⁵ heterostructures with increased optical power and high wall-plug efficiency (WPE _~ 70%). An increase in the internal quantum and external differential efficiency, a decrease in the threshold current, the cut-off voltage and series resistance, together allowed improving the output parameters of the semiconductor emitters.