A 14.8 dBm 20.3 dB Power Amplifier for D-band Applications in 40 nm CMOS

This paper presents a high output power, high gain, class-AB power amplifier (PA) in 40 nm CMOS technology for D-band applications. Two-way transformer-based power-combining is implemented in order to increase output power. The supply voltage of the designed PA is 1 V. The PA achieves a P
_SAT
of 14.8 dBm, small-signal gain of 20.3 dB and maximum PAE of 8.9 % at 140 GHz.