The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow

GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The sub-micron devices also show the comparable results in DC and small signal characteristics.