Rectifying Characteristics of Resonant Tunneling MIS Devices Using Ultra-Thin High-k Oxides Deposited by ALD

The electrical properties of metal-insulator-insulator-insulator-semiconductor nanostructures as rectifiers are investigated. Ultra-thin insulator layers of Al₂O₃/TiO₂/Al₂O₃ having 2 nm/1 nm/2 nm in thickness are deposited by the atomic layer deposition to enhance resonant tunneling under substrate and gate injection. Superior low-voltage, large-signal, and small-signal nonlinearities such as an asymmetry of 45 at 1 V and a non-linearity of 19 V^-1 are obtained.