Ge-Based Asymmetric RRAM Enable $8{F}^{2}$ Content Addressable Memory

In this work, we developed an asymmetric Ge-based RRAM using a fully CMOS compatible process. Due to the adoption of a thin AlO
_x
/GeO
_x
interfacial layer, the TiN/HfO
_x
/AlO
_x
/GeO
_x
/Ge structured RRAM shows both excellent switching behavior and diodelike rectifying characteristics. Based on the asymmetric RRAM device, a high density nonvolatile content addressable memory was proposed and demonstrated, and its function was verified by experimental measurements. This novel two-asymmetric RRAM-based TCAM cell with only 8F
²
size is very promising for future energy and area-efficient IoT and Internet applications.