Simulation on stress-electromagnetic coupling characters of a millimeter-wave system in package

On the considering of pre-stress and thermal-stress measurement and characterization demands for three-dimension system in packages, the paper investigates a potential stress characterization method based on analysis of mechanism of stress-electromagnetic coupling for silicon-based millimeter-wave system in package. By employing electromagnetic-thermal-mechanical coupled multi-physics simulation, relationship between temperature rise and input millimeter-wave power, relationship between maximum stress and input power, and S-parameters changes against stress were obtained, the result indicated that high Q-factor passive component is more sensitive to the thermal deformation.