Optical absorption and photoluminescence of ZnNPc & ZnTTBNc based OFETs for radiation dosimeter

Radiation dosimeters based organic thin film transistors have been developed using zinc (II) naphthalocyanine and zinc (II) tetra tert butyl-2,3 naphthalocyanine. The present investigation deals with the optical characteristics of both organic transistors. The optical characterization of as-deposited thin film transistors and thin film transistors exposed to various levels of γ radiation dose clearly show that the optical band gap decreases with increase of dose upto a certain level. The observed linear response between the absorbance at the center of the Q band and the γ radiation dose validated the use of both zinc (II) naphthalocyanine and zinc (II) tetra tert butyl-2,3 naphthalocyanine based organic thin film transistors for room temperature γ radiation dosimeter.