Impact of post deposition annealing on resistive switching in Ga2O3-based conductive-bridge RAM devices

We study the influence of post-deposition annealing on the electrical properties of performance of Ga₂O₃-based Cu-ion-based conductive-bridge RAM (CBRAM) devices. Amorphous gallium oxide (Ga₂O₃) thin films were fabricated by RF sputtering at room temperature. The deposited films were annealed from the different temperatures and gas ambient. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. The substantial improvement in device performance, such as stable switching, high switching cycles, and increased memory window, were obtained in the CBRAM devices during the post-Ga203 deposition annealing in pure nitrogen (N₂) ambient.